Growth of epitaxial silicon layers by ion beam sputtering
نویسندگان
چکیده
منابع مشابه
Ion Beam Induced Strain Relaxation in Pseudomorphous Epitaxial SiGe Layers
A.F. Vyatkin, V.S. Avrutin, N.F. Izyumskaya, V.K. Egorov, V.V. Starkov, V.I. Zinenko, Institute of Microelectronics Technology, RAS, 142432, Moscow distr., Chemogolovka, Russia LA. Smimova, Institute of Solid State Physics, RAS, 142432, Moscow distr.,Chernogolovka, Russia P.L.F. Hemment, A. Nejim, University of Surrey, Guilford, UK V.I. Vdovin, Institute for Chemical Problems of Microelectronic...
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ژورنال
عنوان ژورنال: Journal of Materials Science
سال: 1970
ISSN: 0022-2461,1573-4803
DOI: 10.1007/bf00558187